Nexperia lately introduced the discharge of two Electrostatic Discharge (ESD) named PESD2V8Y1BSF and PESD4V0Y1BCSF. The 2 safety units are optimized to be used with retimers and redrivers on high-speed information strains. PESD2V8Y1BSF is able to defending USB4 (Thunderbolt) interfaces whereas PESD4V0Y1BCSF is able to defending the HDMI 2.1 interface along with the USB4. The RF efficiency of the TrEOS know-how utilized by the units stays steady over the complete working voltage vary. Aside from USB4 and HDMI 2.1, each components can be used to guard PCIe and DisplayPort interfaces.
In keeping with the corporate, these merchandise use Nexperia’s TrEOS know-how, which mixes low clamping with low capacitance and excessive robustness. Moreover, to extend the general system-level ESD robustness and assist compensate for the diminished inductance between safety and retimer, each the units present quick Transmission Line Pulse (vfTLF) peak clamping voltages, that are significantly decrease than the USB4 safety answer with out seen set off voltage in the usual I(V) TLP curve.
The 2 ESD units provide full RF efficiency as much as the reverse standoff voltage because the capacitance within the modules doesn’t enhance with working voltage. These units have a low insertion loss (-0.29 dB @ 10 GHz) and return loss (-20.6 dB @ 10 GHz) to adjust to finances loss suggestions for ESD. In contrast to different units, the PESD2V8Y1BSF and PESD4V0Y1BCSF might be positioned instantly subsequent to the connector of the gadget which they’re defending, subsequently providing larger design flexibility than different ESD safety units, this additionally helps in enhancing the safety of the AC coupling capacitance
“Nexperia allows design engineers to fulfill tight budgets on each insertion and return loss for top pace USB4 information strains by offering units that reduce the influence of ESD safety on general system finances,” says Stefan Seider, senior product supervisor at Nexperia. “These units provide the optimum stability between optimizing system-level ESD robustness and RF efficiency.”